کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
1671180 1008912 2009 5 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
ZnxCd1 − xS as a heterojunction partner for CuIn1 − xGaxS2 thin film solar cells
کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه مهندسی مواد فناوری نانو (نانو تکنولوژی)
پیش نمایش صفحه اول مقاله
ZnxCd1 − xS as a heterojunction partner for CuIn1 − xGaxS2 thin film solar cells
چکیده انگلیسی

Zinc cadmium sulfide (ZnxCd1 − xS) heterojunction partner layer prepared with chemical bath deposition (CBD) has exhibited better blue photon response and higher current densities due to its higher bandgap than that of conventional cadmium sulfide (CdS) layer for CuIn1 − xGaxS2 (CIGS2) solar cells. CIGS2/ZnxCd1 − xS devices have also shown higher open circuit voltage, Voc indicating improved junction properties. A conduction band offset has been observed by J–V curves at various temperatures indicating that still higher Voc can be obtained by optimizing the conduction band offset. This contribution discusses the effect of variation of parameters such as concentration of compounds, pH of solution and deposition time during CBD on device properties and composition and crystallinity of film. Efficiencies comparable to CIGS2/CdS devices have been achieved for CIGS2/ZnxCd1 − xS devices.

ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Thin Solid Films - Volume 517, Issue 7, 2 February 2009, Pages 2295–2299
نویسندگان
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