کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1671188 | 1008912 | 2009 | 4 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
MOCVD indium sulphide for application as a buffer layer in CIGS solar cells
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موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
فناوری نانو (نانو تکنولوژی)
پیش نمایش صفحه اول مقاله

چکیده انگلیسی
Indium sulphide has a high potential as a buffer layer material in Cu(In,Ga)Se2 (CIGS) solar devices. In this work a metal organic vapour deposition (MOCVD) process was investigated for the indium sulphide deposition. Trimethyl-indium and t-butyl-thiol were applied as precursor sources. The films produced with different process conditions were characterised by scanning electron microscopy. We also present the first results of CIGS laboratory cells with an MOCVD indium sulphide buffer layer. The best device showed an efficiency of 12.3% (CdS reference = 13.0%) at a deposition temperature of 300 °C and a deposition time of 20 min, combined with a 5 min post-annealing treatment at 200 °C in air.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Thin Solid Films - Volume 517, Issue 7, 2 February 2009, Pages 2328–2331
Journal: Thin Solid Films - Volume 517, Issue 7, 2 February 2009, Pages 2328–2331
نویسندگان
S. Spiering, L. Bürkert, D. Hariskos, M. Powalla, B. Dimmler, C. Giesen, M. Heuken,