کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
1671188 1008912 2009 4 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
MOCVD indium sulphide for application as a buffer layer in CIGS solar cells
موضوعات مرتبط
مهندسی و علوم پایه مهندسی مواد فناوری نانو (نانو تکنولوژی)
پیش نمایش صفحه اول مقاله
MOCVD indium sulphide for application as a buffer layer in CIGS solar cells
چکیده انگلیسی

Indium sulphide has a high potential as a buffer layer material in Cu(In,Ga)Se2 (CIGS) solar devices. In this work a metal organic vapour deposition (MOCVD) process was investigated for the indium sulphide deposition. Trimethyl-indium and t-butyl-thiol were applied as precursor sources. The films produced with different process conditions were characterised by scanning electron microscopy. We also present the first results of CIGS laboratory cells with an MOCVD indium sulphide buffer layer. The best device showed an efficiency of 12.3% (CdS reference = 13.0%) at a deposition temperature of 300 °C and a deposition time of 20 min, combined with a 5 min post-annealing treatment at 200 °C in air.

ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Thin Solid Films - Volume 517, Issue 7, 2 February 2009, Pages 2328–2331
نویسندگان
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