کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1671198 | 1008912 | 2009 | 4 صفحه PDF | دانلود رایگان |
![عکس صفحه اول مقاله: Dependence of carrier lifetime on Cu-contacting temperature and ZnTe:Cu thickness in CdS/CdTe thin film solar cells Dependence of carrier lifetime on Cu-contacting temperature and ZnTe:Cu thickness in CdS/CdTe thin film solar cells](/preview/png/1671198.png)
Cu diffusion from a ZnTe:Cu contact interface can increase the net acceptor concentration in the CdTe layer of a CdS/CdTe photovoltaic solar cell. This reduces the space-charge width (Wd) of the junction and enhances current collection and open-circuit voltage. Here we study the effect of Cu concentration in the CdTe layer on carrier lifetime (τ) using time-resolved photoluminescence measurements of ZnTe:Cu/Ti-contacted CdTe devices. Measurements show that if the ZnTe:Cu layer thickness remains constant and contact temperature is varied, τ increases significantly above its as-deposited value when the contacting temperature is in a range that has been shown to yield high-performance devices (~ 280° to ~ 320 °C). However, when the contacting temperature is maintained near an optimum value and the ZnTe:Cu thickness is varied, τ decreases with ZnTe:Cu thickness.
Journal: Thin Solid Films - Volume 517, Issue 7, 2 February 2009, Pages 2370–2373