کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
1671204 1008912 2009 4 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Preparation of wide gap Cu(In,Ga)S2 films on ZnO coated substrates
موضوعات مرتبط
مهندسی و علوم پایه مهندسی مواد فناوری نانو (نانو تکنولوژی)
پیش نمایش صفحه اول مقاله
Preparation of wide gap Cu(In,Ga)S2 films on ZnO coated substrates
چکیده انگلیسی
We have prepared Cu(In,Ga)S2 films at growth temperatures from 300 °C to 580 °C with a homogeneous gallium depth distribution (estimated band gap 1.67 eV) onto soda lime glass (SLG) substrates with one of three different kinds of back contact: Mo(1000 nm), ZnO(500 nm), and Mo(30 nm)/ZnO(500 nm), respectively. We have also investigated the depth profiles of Zn and Na (diffused from SLG) in Cu(In,Ga)S2 films by secondary ion mass spectroscopy (SIMS). The efficiency of solar cells on Mo increases with increasing growth temperature. It is higher on Mo/ZnO than on ZnO, and increases from 350 °C to 450 °C, then decreases above 450 °C. It was observed by SIMS that the amount of Zn in Cu(In,Ga)S2 on Mo/ZnO is lower than it is on ZnO up to 450 °C, and a large amount of Zn diffuses into absorbers over 450 °C, which contributes to decreasing efficiency. The amount of Na in the back contact increases with growth temperature. The depth distribution of Na in Cu(In,Ga)S2 films on Mo is almost constant in the order of 1017-1018 cm− 3, on ZnO and Mo/ZnO the Na concentration increases towards the surface and is in the range of 1015-1017 cm− 3.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Thin Solid Films - Volume 517, Issue 7, 2 February 2009, Pages 2395-2398
نویسندگان
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