کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
1671221 1008912 2009 4 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Intrinsic defects and metastability effects in Cu2O
موضوعات مرتبط
مهندسی و علوم پایه مهندسی مواد فناوری نانو (نانو تکنولوژی)
پیش نمایش صفحه اول مقاله
Intrinsic defects and metastability effects in Cu2O
چکیده انگلیسی

Cu2O based junctions (both Schottky and ZnO/Cu2O heterojunctions) exhibit a metastable capacitance increase after illumination or reverse bias application. We show that this effect is related to the persistent photoconductivity in Cu2O substrates. To obtain a quantitative evaluation of defect properties we have measured conductivity vs T, Capacitance–Voltage, persistent photoconductivity decay and capacitance transient at different temperatures.We show that it is impossible to explain these data using an electronic mechanism only. A new model which includes the formation–dissociation of intrinsic defect complexes (VCu–VO) can give instead a better agreement with the experimental data.

ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Thin Solid Films - Volume 517, Issue 7, 2 February 2009, Pages 2469–2472
نویسندگان
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