Oxidant-assisted preparation of CaMoO4 thin film using an irreversible galvanic cell method

CaMoO4 thin films were prepared by an irreversible galvanic cell method at room temperature; the crystalline phase structure, surface morphology, chemical composition and room temperature photoluminescence property were characterized by X-ray diffraction, Raman spectroscopy, scanning electronic microscopy, X-ray photoelectron spectroscopy as well as photoluminescence spectroscopy. Our results reveal that it is very difficult to directly deposit dense and uniform CaMoO4 thin films in saturated Ca(OH)2 solution at room temperature by the irreversible galvanic cell method. After adding some oxidant (NaClO solution or H2O2 solution), the growth of CaMoO4 grains has been promoted, and well-crystallized, dense, and uniform CaMoO4 films were obtained. The as-prepared CaMoO4 films exhibit a good green photoluminescence, with the excitation of various wavelengths (220 nm, 230 nm, 240 nm, 250 nm and 270 nm) of ultraviolet irradiation.