کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1671247 | 1008913 | 2010 | 8 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Low temperature atomic layer deposition of titania thin films
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
فناوری نانو (نانو تکنولوژی)
پیش نمایش صفحه اول مقاله
چکیده انگلیسی
This paper presents a comprehensive study of atomic layer deposition of TiO2 films on silicon and polycarbonate substrates using TiCl4 and H2O as precursors at temperatures in the range 80–120 °C. An in-situ quartz crystal microbalance was used to monitor different processing conditions and the resultant films were characterised ex-situ using a suite of surface analytical tools. In addition, the contact angle and wettability of as-deposited and UV irradiated films were assessed. The latter was found to reduce the contact angle from ≥ 80° to < 10°. Finally, the effect of surface pre-treatment on film toughness and adhesion was investigated and the results show a significant improvement for the pre-treated films.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Thin Solid Films - Volume 518, Issue 12, 2 April 2010, Pages 3182–3189
Journal: Thin Solid Films - Volume 518, Issue 12, 2 April 2010, Pages 3182–3189
نویسندگان
G. Triani, J.A. Campbell, P.J. Evans, J. Davis, B.A. Latella, R.P. Burford,