Superposed forward current-voltage characteristics in TbMnO3/n-Si and TbMnO3/p-Si heterostructures

TbMnO3/n-Si (n-N) and TbMnO3/p-Si (p-n) heterojunctions were fabricated under identical conditions. Good rectifying characteristics were found with almost the same forward current-voltage behavior in a temperature range from 150 to 300 K. Such intriguing superposed rectifying behaviours at the interfaces between TbMnO3 and Si of two different doped types can be explained by a similar Schottky barrier diode behavior with its current-voltage dependence generally dominated by only one type of carrier. This work will favor both electronic transport analysis and future device applications.