کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1671348 | 1008915 | 2010 | 4 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Defect control by Al deposition and the subsequent post-annealing for SiGe-on-insulator substrates with different Ge fractions
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
فناوری نانو (نانو تکنولوژی)
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: Defect control by Al deposition and the subsequent post-annealing for SiGe-on-insulator substrates with different Ge fractions Defect control by Al deposition and the subsequent post-annealing for SiGe-on-insulator substrates with different Ge fractions](/preview/png/1671348.png)
چکیده انگلیسی
SiGe-on-insulator (SGOI) substrates with different Ge fractions (Ge%) were fabricated using Ge condensation technique. High acceptor concentration (NA) in SGOI layer and interface-trap density (Dit) at SGOI/buried oxide (BOX) interface were found by using back-gate metal-oxide-semiconductor field-effect transistor method. For the reduction of high NA and Dit, Al deposition and the subsequent post-deposition annealing (Al-PDA) were carried out. As a comparison, a forming gas annealing (FGA) was also performed in H2 ambient. It was found that both Al-PDA and FGA effectively reduced NA and Dit for low-Ge% SGOI. However, with an increase in Ge%, FGA became less effective while Al-PDA was very effective for the reduction of NA and Dit.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Thin Solid Films - Volume 518, Issue 9, 26 February 2010, Pages 2342-2345
Journal: Thin Solid Films - Volume 518, Issue 9, 26 February 2010, Pages 2342-2345
نویسندگان
Haigui Yang, Dong Wang, Hiroshi Nakashima, Kana Hirayama, Satoshi Kojima, Shogo Ikeura,