کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
1671393 1008915 2010 7 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Ternary GeSiSn alloys: New opportunities for strain and band gap engineering using group-IV semiconductors
موضوعات مرتبط
مهندسی و علوم پایه مهندسی مواد فناوری نانو (نانو تکنولوژی)
پیش نمایش صفحه اول مقاله
Ternary GeSiSn alloys: New opportunities for strain and band gap engineering using group-IV semiconductors
چکیده انگلیسی

Ternary GeSiSn alloys have been recently demonstrated on Ge- and GeSn-buffered Si substrates. These alloys, with a two-dimensional compositional space, make it possible to decouple lattice constant and electronic structure for the first time in a group-IV system. This paper reviews the basic properties of the GeSiSn alloy, presents some new results on its optical properties, and discusses the approach that has been followed to model heterostructures containing GeSiSn layers for applications in modulators, quantum cascade lasers, and photovoltaics.

ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Thin Solid Films - Volume 518, Issue 9, 26 February 2010, Pages 2531–2537
نویسندگان
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