کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
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1671395 | 1008915 | 2010 | 4 صفحه PDF | دانلود رایگان |
Pulsed laser induced epitaxy (PLIE), based on melting/solidification processes induced by nanosecond laser pulses, is used to synthesize pseudomorphic Si1 − xGex epilayers from 20 to 80 nm thick Ge layers evaporated on a Si(100) wafer. Ge concentration and strain are characterized by transient reflectivity, energy dispersive X-ray analysis and X-ray diffraction from symmetric (004) and asymmetric (224) reflections. For a low Ge thickness or a high laser fluence, PLIE builds up only a pseudomorphic strained Si1 − xGex layer with a graded Ge composition reaching x ≈ 19% near the surface. When the Ge amount is in excess to achieve this situation, PLIE forms additionally a relaxed Si1 − xGex layer with x values up to ≈40% over the previous pseudomorphic layer.
Journal: Thin Solid Films - Volume 518, Issue 9, 26 February 2010, Pages 2542–2545