Ferroelectric field-effect transistor based on transparent oxides

We studied a PbxZr1−xTiO3/SnO2/Al2O3 heterostructure as a base for transparent ferroelectric field-effect transistor. Single-crystal SnO2/Al2O3 epitaxial films with the electron mobility of 25 cm2/V were grown by pulsed laser deposition using two YAG:Nd lasers. Depletion mode transistor Au/PZT/SnO2/Al2O3 was produced by laser ablation and RF sputtering. All the samples demonstrate clockwise hysteresis of the source–drain characteristic. The energy distribution of traps at the PZT/SnO2 interface was determined using a modified version of a transient current method. The effect of PZT intergrain boundaries on the retention time was taken into account for experimental data discussion.