کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1671762 | 1008923 | 2010 | 5 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Investigation on structural, electrical and optical properties of tungsten-doped tin oxide thin films
دانلود مقاله + سفارش ترجمه
دانلود مقاله ISI انگلیسی
رایگان برای ایرانیان
کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
فناوری نانو (نانو تکنولوژی)
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: Investigation on structural, electrical and optical properties of tungsten-doped tin oxide thin films Investigation on structural, electrical and optical properties of tungsten-doped tin oxide thin films](/preview/png/1671762.png)
چکیده انگلیسی
Tungsten-doped tin oxide (SnO2:W) transparent conductive films were prepared on quartz substrates by pulsed plasma deposition method with a post-annealing. The structure, chemical states, electrical and optical properties of the films have been investigated with tungsten-doping content and annealing temperature. The lowest resistivity of 6.67 × 10− 4 Ω cm was obtained, with carrier mobility of 65 cm2 V− 1 s− 1 and carrier concentration of 1.44 × 1020 cm− 3 in 3 wt.% tungsten-doping films annealed at 800 °C in air. The average optical transmittance achieves 86% in the visible region, and approximately 85% in near-infrared region, with the optical band gap ranging from 4.05 eV to 4.22 eV.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Thin Solid Films - Volume 518, Issue 8, 1 February 2010, Pages 1892–1896
Journal: Thin Solid Films - Volume 518, Issue 8, 1 February 2010, Pages 1892–1896
نویسندگان
Yanwei Huang, Guifeng Li, Jiahan Feng, Qun Zhang,