کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1671791 | 1008923 | 2010 | 5 صفحه PDF | دانلود رایگان |
![عکس صفحه اول مقاله: Influence of N2 flow rate on the mechanical properties of SiNx films deposited by microwave electron cyclotron resonance magnetron sputtering Influence of N2 flow rate on the mechanical properties of SiNx films deposited by microwave electron cyclotron resonance magnetron sputtering](/preview/png/1671791.png)
Hydrogen-free amorphous silicon nitride (SiNx) films were deposited at room temperature by microwave electron cyclotron resonance plasma-enhanced unbalance magnetron sputtering. Varying the N2 flow rate, SiNx films with different properties were obtained. Characterization by Fourier-transform infrared spectrometry revealed the presence of Si–N and Si–O bonds in the films. Growth rates from 1.0 to 4.8 nm/min were determined by surface profiler. Optical emission spectroscopy showed the N element in plasma mainly existed as N+ species and N2+ species with 2 and 20 sccm N2 flow rate, respectively. With these results, the chemical composition and the mechanical properties of SiNx films strongly depended on the state of N element in plasma, which in turn was controlled by N2 flow rate. Finally, the film deposited with 2 sccm N2 flow rate showed no visible marks after immersed in etchant [6.7% Ce(NH4)2(NO3)6 and 93.3% H2O by weight] for 22 h and wear test for 20 min, respectively.
Journal: Thin Solid Films - Volume 518, Issue 8, 1 February 2010, Pages 2077–2081