Modeling of In segregation, stress and strain in InGaAs/GaAs(100) quantum well heterostructures

An advanced model for simulation of In segregation phenomena, stress and strain distribution during metal–organic chemical vapor deposition of InGaAs/GaAs(100) quantum well (QW) heterostructures based on representation of boundary gas layer as “quasi-liquid” has been suggested. Elastic energy was taken into account by considering epitaxy as a sequence of growth acts each resulted in the formation of ultrathin imaginary layers. The assumption that elastic influence is not distributed throughout the whole thickness of the substrate but affects only its near-surface layer has been postulated. Results of calculations of In profiles and stress distribution for heterostructures with single and multiple QWs for varied epitaxy conditions are provided. Various options of exploring the developed model for other materials and the limitations of applicability are discussed.