کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
1671797 1008923 2010 4 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Composition depth profile analysis of bulk heterojunction layer by time-of-flight secondary ion mass spectrometry with gradient shaving preparation
موضوعات مرتبط
مهندسی و علوم پایه مهندسی مواد فناوری نانو (نانو تکنولوژی)
پیش نمایش صفحه اول مقاله
Composition depth profile analysis of bulk heterojunction layer by time-of-flight secondary ion mass spectrometry with gradient shaving preparation
چکیده انگلیسی

Composition depth profile analysis of bulk heterojunction (BHJ) layer was performed by time-of-flight secondary ion mass spectrometry with gradient shaving preparation. The BHJ layer comprised of poly(3-hexylthiophene) (P3HT) and [6,6]-phenyl-C61butyric acid methyl ester (PCBM) was formed on the substrate coated with poly(3,4-ethylenedioxythiophene):poly(styrenesulfonate) (PEDOT:PSS) followed by annealing. The P3HT component increased toward the top surface in the BHJ layer. In addition, C8H7SO3− was detected inside the BHJ layer, suggesting penetration of PSS. P3HT was uniformly distributed in the BHJ layer without PEDOT:PSS. The P3HT-rich distribution in the top surface may be attributed to PSS penetration.

ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Thin Solid Films - Volume 518, Issue 8, 1 February 2010, Pages 2115–2118
نویسندگان
, , , , , ,