کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1671799 | 1008923 | 2010 | 4 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Dual comb-type electrodes as a plasma source for very high frequency plasma enhanced chemical vapor deposition
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
فناوری نانو (نانو تکنولوژی)
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: Dual comb-type electrodes as a plasma source for very high frequency plasma enhanced chemical vapor deposition Dual comb-type electrodes as a plasma source for very high frequency plasma enhanced chemical vapor deposition](/preview/png/1671799.png)
چکیده انگلیسی
Dual comb-type electrodes were developed as a plasma source in very high frequency (VHF) plasma enhanced chemical vapor deposition system for uniform deposition of silicon films. Two VHF powers introduced to each electrode produced parallel plasma bands, and their positions could be changed by manipulating the phase difference between the supplied VHF waves. Excitation frequency was 80 MHz. The maximum plasma density using this plasma source was 1.5 × 1010/cm3 and the electron temperature was around 2 eV with input power of 2.5 kW, which were measured by double tip Langmuir probe. The uniformity of deposition rate under ± 13% was achieved on 1 m2 area with optimal plasma conditions.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Thin Solid Films - Volume 518, Issue 8, 1 February 2010, Pages 2124–2127
Journal: Thin Solid Films - Volume 518, Issue 8, 1 February 2010, Pages 2124–2127
نویسندگان
Doo Sup Hwang, Seung Yoon Lee, Heon Min Lee, Sang Jin Kim, Gil Jun Kim,