کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1671817 | 1008923 | 2010 | 6 صفحه PDF | دانلود رایگان |
![عکس صفحه اول مقاله: Flexible copper-7,7,8,8 tetracyanochinodimethane memory devices — Operation, cross talk and bending Flexible copper-7,7,8,8 tetracyanochinodimethane memory devices — Operation, cross talk and bending](/preview/png/1671817.png)
Non-volatile memory devices based on the charge transfer complex copper-7,7,8,8 tetracyanochinodimethane were fabricated on ridged and flexible substrates with special emphasis on their general functionality and cross talk behaviour in 4 × 4 passive matrix arrays. Device characteristics have been investigated at elevated temperatures during operation (ranging from room temperature to 120 °C) under ambient conditions without encapsulation. To explore the influence of mechanical stress on device performance, the memory cells on flexible polyethylene terephthalate substrates were bended during operation, up to a convex and concave radius of 4 mm. The detected shift of the switching voltages and the decrease of reliability can be attributed to stress induced cracks in the active layer.
Journal: Thin Solid Films - Volume 518, Issue 8, 1 February 2010, Pages 2222–2227