کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1671972 | 1008927 | 2009 | 5 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
An atomic-scale study of hydrogenated silicon cluster deposition on a crystalline silicon surface
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
فناوری نانو (نانو تکنولوژی)
پیش نمایش صفحه اول مقاله
چکیده انگلیسی
Controlled deposition of clusters on solid surfaces has attracted lots of attention in recent years, because of its potential application to tailoring the desired electronic properties of the resulting surfaces. We have carried out an atomic-scale study to understand the deposition mechanism. The molecular dynamics approach based on a modified Tersoff potential is used to simulate the deposition mechanism of hydrogenated silicon clusters on a crystalline silicon surface in detail. The important factors governing the deposition process such as impact energy and substrate temperature, are investigated for the hydrogenated silicon cluster Si29H24 on a H-terminated Si(100)-(2x1) surface.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Thin Solid Films - Volume 517, Issue 23, 1 October 2009, Pages 6234–6238
Journal: Thin Solid Films - Volume 517, Issue 23, 1 October 2009, Pages 6234–6238
نویسندگان
Ning Ning, Steven M. Rinaldi, Holger Vach,