Electrical and optical properties of 12CaO·7Al2O3 electride doped indium tin oxide thin film deposited by RF magnetron co-sputtering

12CaO·7Al2O3 electride (C12A7:e−) doped indium tin oxide (ITO) (ITO:C12A7:e−) thin films were fabricated on a glass substrate by an RF magnetron co-sputtering system with increasing number of C12A7:e− chips (from 1 to 7) and at various oxygen partial pressure ratios. The optical transmittance of the ITO:C12A7:e− thin film was higher than 70% in the visible wavelength region. In the electrical properties of the thin film, a decrease of the carrier concentration from 2.6 × 1020 cm− 3 to 2.1 × 1018 cm− 3 and increase of the resistivity from 1.4 × 10− 3 Ω cm to 4.1 × 10− 1 Ω cm were observed with increasing number of C12A7:e− chips and oxygen partial pressure ratios. It was also observed that the Hall mobility was decreased from 17.27 cm2·V− 1·s− 1 to 5.13 cm2·V− 1·s− 1. The work function of the ITO thin film was reduced by doping it with C12A7:e−.