کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1671998 | 1008927 | 2009 | 4 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Stability of indium-oxide thin-film transistors by reactive ion beam assisted deposition
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
فناوری نانو (نانو تکنولوژی)
پیش نمایش صفحه اول مقاله
چکیده انگلیسی
This work reports on the performance and stability of bottom-gate In2O3-TFTs with PECVD silicon dioxide gate dielectric. A highly-resistive amorphous In2O3 channel layer was deposited at room temperature by reactive ion beam assisted evaporation (IBAE). The field-effect mobility of the n-channel TFT is 33 cm2/V-s, along with an ON/OFF current ratio of 109, and threshold voltage of 2 V. Device stability was demonstrated through measurement of the threshold voltage shift during long-term gate bias-stress and current stress experiments. Device performance, including stability, together with low-temperature processing, makes the indium-oxide TFT an attractive candidate for flexible transparent electronics, and display applications.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Thin Solid Films - Volume 517, Issue 23, 1 October 2009, Pages 6341–6344
Journal: Thin Solid Films - Volume 517, Issue 23, 1 October 2009, Pages 6341–6344
نویسندگان
Y. Vygranenko, K. Wang, R. Chaji, M. Vieira, J. Robertson, A. Nathan,