کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
1672005 1008927 2009 4 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Analysis of self-heating related instability in n-channel polysilicon thin film transistors fabricated on polyimide
موضوعات مرتبط
مهندسی و علوم پایه مهندسی مواد فناوری نانو (نانو تکنولوژی)
پیش نمایش صفحه اول مقاله
Analysis of self-heating related instability in n-channel polysilicon thin film transistors fabricated on polyimide
چکیده انگلیسی

In this work, we investigated self-heating related instability in polysilicon thin film transistors (poly-Si TFTs) fabricated on polyimide (PI) substrates. Indeed, when Joule heating becomes relevant, the temperature of the active layer can substantially rise, since the devices are fabricated on thermally insulating substrates. As a result, electrical instability is triggered and attributed to the generation of interface states, due to the Si–H bond breaking, and charge trapping into the gate insulator. In addition, by using 3-dimensional numerical simulations, coupling the thermodynamic and transport models, we analyzed the temperature distribution of the device under operating conditions and found that self-heating is more severe for devices fabricated on plastic substrates.

ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Thin Solid Films - Volume 517, Issue 23, 1 October 2009, Pages 6371–6374
نویسندگان
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