کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
1672015 1008927 2009 4 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Effect of oxygen pressure of SiOx buffer layer on the electrical properties of GZO film deposited on PET substrate
موضوعات مرتبط
مهندسی و علوم پایه مهندسی مواد فناوری نانو (نانو تکنولوژی)
پیش نمایش صفحه اول مقاله
Effect of oxygen pressure of SiOx buffer layer on the electrical properties of GZO film deposited on PET substrate
چکیده انگلیسی

The present work was made to investigate the effect of oxygen pressure of SiOx layer on the electrical properties of Ga-doped ZnO (GZO) films deposited on poly-ethylene telephthalate (PET) substrate by utilizing the pulsed-laser deposition at ambient temperature. For this purpose, the SiOx buffer layers were deposited at various oxygen pressures ranging from 13.3 to 46.7 Pa. With increasing oxygen pressure during the deposition of SiOx layer as a buffer, the electrical resistivity of GZO/SiOx/PET films gradually decreased from 7.6 × 10− 3 to 6.8 × 10− 4 Ω·cm, due to the enhanced mobility of GZO films. It was mainly due to the grain size of GZO films related to the roughened surface of the SiOx buffer layers. In addition, the average optical transmittance of GZO/SiOx/PET films in a visible regime was estimated to be ~ 90% comparable to that of GZO deposited onto a glass substrate.

ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Thin Solid Films - Volume 517, Issue 23, 1 October 2009, Pages 6414–6417
نویسندگان
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