کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1672072 | 1008928 | 2008 | 7 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Low-temperature atomic layer deposition of ZnO films on particles in a fluidized bed reactor
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
فناوری نانو (نانو تکنولوژی)
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: Low-temperature atomic layer deposition of ZnO films on particles in a fluidized bed reactor Low-temperature atomic layer deposition of ZnO films on particles in a fluidized bed reactor](/preview/png/1672072.png)
چکیده انگلیسی
During the atomic layer deposition (ALD) of ZnO films on a bulk quantity of high surface area particles, the thermal decomposition of diethlyzinc (DEZ) is problematic at normal operating temperatures. A low-temperature pathway to ZnO ALD on bulk quantities of nanoparticles was studied using concentrated H2O2 as the oxidant in a fluidized bed reactor. Decreasing the operating temperature effectively mitigated DEZ decomposition, but caused liquid bridging of particles. The mechanisms behind the non-ideal behaviors associated with high temperature precursor decomposition and low-temperature liquid bridging are discussed. An optimal deposition temperature was observed at 100 °C to balance these effects.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Thin Solid Films - Volume 516, Issue 23, 1 October 2008, Pages 8517–8523
Journal: Thin Solid Films - Volume 516, Issue 23, 1 October 2008, Pages 8517–8523
نویسندگان
David M. King, Xinhua Liang, Peng Li, Alan W. Weimer,