کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1672113 | 1008928 | 2008 | 4 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Characteristics of low doped gallium-zinc oxide thin film transistors and effect of annealing under high vacuum
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
فناوری نانو (نانو تکنولوژی)
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: Characteristics of low doped gallium-zinc oxide thin film transistors and effect of annealing under high vacuum Characteristics of low doped gallium-zinc oxide thin film transistors and effect of annealing under high vacuum](/preview/png/1672113.png)
چکیده انگلیسی
We report on the fabrication and electrical characteristics of thin film transistors (TFTs) based on low Ga-doped zinc oxide (GZO). Low Ga-doped (1Â wt.%) ZnO thin films deposited as an active channel by radio frequency magnetron sputtering at room temperature exhibit a high transmittance (>Â 80%). The devices show a mobility of ~Â 5.7Â cm2/Vs at low operation voltage of <Â 5Â V and a low turn-on voltage of ~Â 0.5Â V with a subthreshold swing of ~Â 85Â mV/decade. The TFT device performance is significantly affected by vacuum-level and annealing treatment, which is attributed to the chemisorption/desorption of oxygen from the surface of active channel. Low doped GZO is a type of TFT channel material that has potential for high performance, multi-functionality and easy-process.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Thin Solid Films - Volume 516, Issue 23, 1 October 2008, Pages 8736-8739
Journal: Thin Solid Films - Volume 516, Issue 23, 1 October 2008, Pages 8736-8739
نویسندگان
Ved Prakash Verma, Do-Hyun Kim, Hoonha Jeon, Minhyon Jeon, Wonbong Choi,