کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1672113 | 1008928 | 2008 | 4 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Characteristics of low doped gallium-zinc oxide thin film transistors and effect of annealing under high vacuum
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
فناوری نانو (نانو تکنولوژی)
پیش نمایش صفحه اول مقاله
چکیده انگلیسی
We report on the fabrication and electrical characteristics of thin film transistors (TFTs) based on low Ga-doped zinc oxide (GZO). Low Ga-doped (1Â wt.%) ZnO thin films deposited as an active channel by radio frequency magnetron sputtering at room temperature exhibit a high transmittance (>Â 80%). The devices show a mobility of ~Â 5.7Â cm2/Vs at low operation voltage of <Â 5Â V and a low turn-on voltage of ~Â 0.5Â V with a subthreshold swing of ~Â 85Â mV/decade. The TFT device performance is significantly affected by vacuum-level and annealing treatment, which is attributed to the chemisorption/desorption of oxygen from the surface of active channel. Low doped GZO is a type of TFT channel material that has potential for high performance, multi-functionality and easy-process.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Thin Solid Films - Volume 516, Issue 23, 1 October 2008, Pages 8736-8739
Journal: Thin Solid Films - Volume 516, Issue 23, 1 October 2008, Pages 8736-8739
نویسندگان
Ved Prakash Verma, Do-Hyun Kim, Hoonha Jeon, Minhyon Jeon, Wonbong Choi,