Photo-sensor with photo-electric conversion molecules and a modified gold nanostructured FET gate film

We have investigated a nanostructured electrode from the viewpoint of improving the performance of FETs. The nanostructured gold layer acted as a positive factor contributing to an increase in the photocurrent, while maintaining low levels of photo-voltage (photo-Voc) of the gold electrode itself and the FET performance (photo-Ids). Such negative effects of the nanostructured gold layer were attributed to the low-surface coverage of molecules and high interactive ability between the electrode and the electro-active species in the enlarged diffusion layer of the electrolyte solution around the nanostructured gold electrode.