Electrodeposition of Cu–In–Ga thin metal films for Cu(In, Ga)Se2 based solar cells

Cu–In–Ga (CIG) layers of graded composition have been grown by one-step electrodeposition from thiocyanate complex electrolytes. The Ga-content is adjusted from two to 30 at.% by changing stirring rate, deposition time and solution composition. The as prepared CIG precursors are selenizated at 500 °C in a two-temperature zone furnace at different Se-vapour pressures. The influence of the Se-vapour pressure on morphology and photoluminescence properties of Cu(In, Ga)Se2 films are discussed.