Growth of FeSe on general substrates by metal-organic chemical vapor deposition and the application in magnet tunnel junction devices

Single-phase tetragonal FeSe films were grown on c-plane sapphire, SiO2, GaAs (100) and Si (100) substrates by low-pressure metal-organic chemical vapor deposition method. X-ray diffraction analysis shows that all the FeSe thin films on different substrates are of (00l) orientation. Spin-dependent magnet tunnel junction with Fe/ZnSe/FeSe structure were fabricated, and the tunneling magnetic resistance ratio decreased with increasing the thickness of ZnSe layer in the range of 10–20 nm.