Fabrication of high breakdown voltage silicon Schottky barrier diodes using various edge termination structures

It was found that the device and fabrication technology developed in the present study is applicable to the realization of SBDs with a high breakdown voltage (≥ 160 V), a low reverse current density (≤ 5.6 μA/cm2), a low forward voltage drop (≤ 5.6 V @ 1 A/cm2), and an adjustable Schottky barrier height of 0.764 to 0.784 eV.