کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1672486 | 1008934 | 2009 | 5 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Influence of the seed layer on structural and electro-acoustic properties of sputter-deposited AlN resonators
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
فناوری نانو (نانو تکنولوژی)
پیش نمایش صفحه اول مقاله
چکیده انگلیسی
The growth of high-quality AlN films has been studied by reactive sputtering onto Mo electrodes with Ni, Ti, and TiW seed layers and subsequent integration into thin film bulk acoustic wave resonators. The crystalline structure and morphology of the Mo and c-axis oriented AlN films were found to vary strongly with seed layer material and thickness. The smoothest Mo electrodes were obtained on thin Ti films. Reactive sputtering of AlN on top of these optimized electrodes resulted in a dense columnar grain structure with a well-aligned (002) crystal orientation and good electro-acoustic properties, including an effective coupling coefficient of 6.89% and quality factor above 1000.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Thin Solid Films - Volume 517, Issue 24, 30 October 2009, Pages 6588-6592
Journal: Thin Solid Films - Volume 517, Issue 24, 30 October 2009, Pages 6588-6592
نویسندگان
T. Riekkinen, A. Nurmela, J. Molarius, T. Pensala, P. Kostamo, M. Ylilammi, S. van Dijken,