Growth and characterization of CuInSe2 thin films prepared by successive ionic layer adsorption and reaction method with different deposition temperatures

CuInSe2 films were prepared at different deposition temperatures (TD) by successive ionic layer adsorption and reaction method with chelating solutions. Influence of TD on film growth, morphology, crystal structure, and band gap energy was investigated. Results showed that elevation of TD mainly enhanced reaction kinetics and ionic diffusion velocity, resulting in fast growth rate of CuInSe2 films, and maximum 20–30 nm/cycle depended upon TD were acquired. Films with 60 dip-cycles could grow from 180 nm to 1000 nm by elevating TD from 30 °C to 90 °C. Surface roughness of CuInSe2 films was closely related to dip-cycle times and TD. Accelerated growth rate by TD could reduce the dip-cycle times for a required film thickness, which improved quality of film morphology.