کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1672507 | 1008934 | 2009 | 6 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Formation of porous niobium films by oblique angle deposition: Influence of substrate morphology
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
فناوری نانو (نانو تکنولوژی)
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: Formation of porous niobium films by oblique angle deposition: Influence of substrate morphology Formation of porous niobium films by oblique angle deposition: Influence of substrate morphology](/preview/png/1672507.png)
چکیده انگلیسی
The present work demonstrates the formation of porous niobium films with separated columnar structures by oblique angle magnetron sputtering for capacitor application. The niobium films deposited on textured aluminium substrates, which had concave cell structures with the cell sizes ranging from 125Â nm to 550Â nm, consist of isolated columns of niobium with wider gaps between columns developing on the substrates with larger cell sizes. The surface areas of the deposited films, evaluated by the capacitance of the anodic films formed at several voltages, increased with an increase in the cell size of substrate. The surface area decreases with an increase in the formation potential of anodic films from 2Â V to 10Â V vs Ag/AgCl, because the gaps are filled with anodic oxide as a consequence of the large Pilling-Bedworth ratio of 2.6 for the Nb/Nb2O5 system. The reduction of the surface area is suppressed when the substrate with larger cell size is used, due to the formation of niobium columns with wider gaps, which are not filled with anodic oxide. The high surface area even at higher formation voltages of the anodic films is a requisite for capacitor application.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Thin Solid Films - Volume 517, Issue 24, 30 October 2009, Pages 6711-6716
Journal: Thin Solid Films - Volume 517, Issue 24, 30 October 2009, Pages 6711-6716
نویسندگان
M. Tauseef Tanvir, Y. Aoki, H. Habazaki,