کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
1672508 1008934 2009 4 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Study of structural and optical properties of Ge doped ZnO films
موضوعات مرتبط
مهندسی و علوم پایه مهندسی مواد فناوری نانو (نانو تکنولوژی)
پیش نمایش صفحه اول مقاله
Study of structural and optical properties of Ge doped ZnO films
چکیده انگلیسی

The Ge doped ZnO films were deposited on quartz substrates by radio frequency magnetron sputtering. The effects of doping and substrate temperature on the structural and optical properties of the Ge doped ZnO films were investigated by means of X-ray diffraction (XRD), UV–visible transmission spectra, X-ray photoelectron spectroscopy and photoluminescence (PL) spectra. The XRD patterns showed that Zn2GeO4 phases were formed in the films. With the increase of substrate temperature the crystallization of Zn2GeO4 was improved, and that of ZnO phases turned worse, and no diffraction peak of ZnO was observed when the substrate temperature was 700 °C. Obvious ultraviolet (UV) light emission was found due to ZnO grains, and it was much stronger than that of un-doped ZnO films. The enhancement of UV light emission at about 380 nm may be caused by excitons which were formed at the interface between Zn2GeO4 and ZnO grains. In the visible region of the PL spectra, the green light emission peak of samples at about 512 nm was associated with defects in ZnO. A red shift of the green light emission peak was observed which can be explained by the fact that there is a luminescence center at about 548 nm taking the place of the defect emission of ZnO with the increase of substrate temperature. The red shift of the green light emission peak and the 548 nm green light emission peaks of the PL spectrum show that some Ge2+ should replace the Zn2+ positions during the Zn2GeO4 grains growth and form the Ge2+ luminescence centers in Zn2GeO4 grains.

ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Thin Solid Films - Volume 517, Issue 24, 30 October 2009, Pages 6717–6720
نویسندگان
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