کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
1672510 1008934 2009 5 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Single-source chemical vapor deposition of clean oriented Al2O3 thin films
موضوعات مرتبط
مهندسی و علوم پایه مهندسی مواد فناوری نانو (نانو تکنولوژی)
پیش نمایش صفحه اول مقاله
Single-source chemical vapor deposition of clean oriented Al2O3 thin films
چکیده انگلیسی

Clean oriented Al2O3 thin film with a dominant Al2O3 <1 1 3> plane was deposited on Si <1 0 0> substrate at 550 °C, by single-source chemical vapor deposition (CVD) using aluminium(III) diisopropylcarbamate, Al2(O2CNiPr2)6. This process represents a substantial reduction in typical CVD film growth temperatures which are typically > 1000 °C. Through the studies of thermal stability of this precursor, we propose a specific β-elimination decomposition pathway to account for the low temperature of the precursor decomposition at the substrate, and for the lack of carbon impurity byproducts in the resulting alumina films that are characterized using X-ray photoelectron spectroscopy and depth profiling.

ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Thin Solid Films - Volume 517, Issue 24, 30 October 2009, Pages 6726–6730
نویسندگان
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