Simulations of a stress and contact model in a chemical mechanical polishing process

A two-dimensional axisymmetric quasi-static contact finite element model for the chemical mechanical polishing process (CMP) was established. The von Mises stress on the wafer surface was investigated. The findings indicate that the profile of the von Mises stress correlated with that of the removal rate. The larger the elastic modulus of the pad or the smaller the elastic modulus of the carrier film, the larger is the maximum von Mises stress. The thicker the pad or the thinner the film, the smaller is the maximum von Mises stress. The larger the load exerted on the carrier, the greater is the maximum von Mises stress.