کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
1672586 1008936 2008 6 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Use of Voigt oscillators to characterize microelectronics materials by Infrared Spectroscopic Ellipsometry
موضوعات مرتبط
مهندسی و علوم پایه مهندسی مواد فناوری نانو (نانو تکنولوژی)
پیش نمایش صفحه اول مقاله
Use of Voigt oscillators to characterize microelectronics materials by Infrared Spectroscopic Ellipsometry
چکیده انگلیسی

We propose a study on the use of Voigt or Lorentz oscillators on three examples of microelectronics materials: fluorinated silicate glass, silicon nitride and polybenzoxazole. The Voigt oscillator is a convolution of Gauss distribution and Lorentz oscillator and includes both homogeneous and inhomogeneous broadening. It is especially suitable to represent infrared transitions in amorphous materials by considering oscillators in the collection of nominally identical atoms that may have slightly different resonance frequencies because of local surroundings, local crystal structures, defects, dislocations or lattice impurities… Infrared ellipsometry spectra are analyzed and fitted using either of these oscillators. The fits are processed first on the regular part of the spectra and then by progressively extending the fitting range from high to low frequencies to the different absorption bands. Through these three examples it is shown that the Voigt oscillator can simplify the fit process, especially when the materials have absorption bands with complicated structure.

ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Thin Solid Films - Volume 516, Issue 22, 30 September 2008, Pages 7996–8001
نویسندگان
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