کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
1672590 1008936 2008 7 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Structural characterization of self-assembled semiconductor islands by three-dimensional X-ray diffraction mapping in reciprocal space
موضوعات مرتبط
مهندسی و علوم پایه مهندسی مواد فناوری نانو (نانو تکنولوژی)
پیش نمایش صفحه اول مقاله
Structural characterization of self-assembled semiconductor islands by three-dimensional X-ray diffraction mapping in reciprocal space
چکیده انگلیسی

For the first time self-organized epitaxially grown semiconductor islands were investigated by a full three-dimensional mapping of the scattered X-ray intensity in reciprocal space. Intensity distributions were measured in a coplanar diffraction geometry around symmetric and asymmetric Bragg reflections. The 3D intensity maps were compared with theoretical simulations based on continuum-elasticity simulations of internal strains in the islands and on kinematical scattering theory whereby local chemical composition and strain profiles of the islands were retrieved.

ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Thin Solid Films - Volume 516, Issue 22, 30 September 2008, Pages 8022–8028
نویسندگان
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