کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1672590 | 1008936 | 2008 | 7 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Structural characterization of self-assembled semiconductor islands by three-dimensional X-ray diffraction mapping in reciprocal space
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موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
فناوری نانو (نانو تکنولوژی)
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چکیده انگلیسی
For the first time self-organized epitaxially grown semiconductor islands were investigated by a full three-dimensional mapping of the scattered X-ray intensity in reciprocal space. Intensity distributions were measured in a coplanar diffraction geometry around symmetric and asymmetric Bragg reflections. The 3D intensity maps were compared with theoretical simulations based on continuum-elasticity simulations of internal strains in the islands and on kinematical scattering theory whereby local chemical composition and strain profiles of the islands were retrieved.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Thin Solid Films - Volume 516, Issue 22, 30 September 2008, Pages 8022–8028
Journal: Thin Solid Films - Volume 516, Issue 22, 30 September 2008, Pages 8022–8028
نویسندگان
V. Holý, K. Mundboth, C. Mokuta, T.H. Metzger, J. Stangl, G. Bauer, T. Boeck, M. Schmidbauer,