Formation of novel Si-fullerene compound materials using a high-density silicon-ion plasma

A Si–Ar plasma is produced using a RF discharge by an internal coil, which is accompanied by DC sputtering, for the purpose of forming novel Si-fullerene compound materials. According to the analysis of the fullerene-C60 after Si–Ar plasma ion irradiation, mass peaks corresponding to Si-heterofullerenes (SiC59, Si2C58 and Si3C57) are observed.It was also found that the method of introducing sublimated C60 into the Si–Ar plasma using a C60-oven resulted in an increase in the formation efficiency of SiC59.