کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1672687 | 1008938 | 2008 | 5 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Temperature-dependent growth of pulsed-laser-deposited bismuth thin films on glass substrates
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
فناوری نانو (نانو تکنولوژی)
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: Temperature-dependent growth of pulsed-laser-deposited bismuth thin films on glass substrates Temperature-dependent growth of pulsed-laser-deposited bismuth thin films on glass substrates](/preview/png/1672687.png)
چکیده انگلیسی
Bismuth thin films were grown by pulsed-laser deposition on glass substrates with the substrate temperature from â 40 °C to 200 °C. The structure of the films was characterized by X-ray diffraction. The surface morphology was studied by atomic force microscopy and X-ray reflectivity. The electrical properties of the films were probed by Hall and van der Pauw measurements. We observed changes in the orientation, grain size and roughness of the bismuth films as a function of the substrate temperature. In particular, at â 30 °C, the surface roughness was drastically reduced, leading to very smooth bismuth films with highly (111)-preferred orientation. Furthermore, the preferred orientation disappeared at around â 40 °C.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Thin Solid Films - Volume 516, Issue 12, 30 April 2008, Pages 3808-3812
Journal: Thin Solid Films - Volume 516, Issue 12, 30 April 2008, Pages 3808-3812
نویسندگان
Keng-Shuo Wu, Ming-Yau Chern,