کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
1672780 1008939 2009 4 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
The effect of AlN buffer layer on properties of AlxIn1 − xN films on glass substrates
موضوعات مرتبط
مهندسی و علوم پایه مهندسی مواد فناوری نانو (نانو تکنولوژی)
پیش نمایش صفحه اول مقاله
The effect of AlN buffer layer on properties of AlxIn1 − xN films on glass substrates
چکیده انگلیسی

AlxIn1 − xN (AlInN) films with x = 0.36 and 0.55 were grown on glass substrate by pulsed direct-current reactive sputtering. X-ray photoelectron spectroscopy depth profiles revealed that oxygen diffused from glass substrate to AlInN films at temperatures ≧ 300 °C. After applying AlN buffer layer, the crystallinity of AlInN films was markedly improved without oxygen contamination observed. The AlN-buffered AlInN films are c-axis-oriented with low full-width-at-half-maximum of 2.9°–3.5°, fine-grained, and low electron concentration, which are comparable with AlInN films grown by other high-temperature processes. AlN buffer layer is proved to be good seeding and diffusion-barrier layers for AlInN films deposited on glass substrates.

ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Thin Solid Films - Volume 517, Issue 11, 2 April 2009, Pages 3204–3207
نویسندگان
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