کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
1672784 1008939 2009 5 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Stress induced crystallization of hydrogenated amorphous silicon
موضوعات مرتبط
مهندسی و علوم پایه مهندسی مواد فناوری نانو (نانو تکنولوژی)
پیش نمایش صفحه اول مقاله
Stress induced crystallization of hydrogenated amorphous silicon
چکیده انگلیسی

Hydrogenated amorphous silicon films were grown on to thermally oxidized silicon wafers by Radio Frequency magnetron sputtering, and SiNx and Al2O3 capping layers were used to control the residual thermal stress. After annealing, a comparison of the silicon films with and without capping layers indicates that tensile stress induced by the capping layer enhances the crystallinity of the annealed amorphous silicon film. The stress is due to the mismatch between the coefficients of thermal expansion for the capping layer and amorphous silicon film. These results highlight the potential of thermal stress as a means to alter the crystallization in thin film architectures and suggest that even larger effects can be obtained with suitable choices of capping layer chemistry.

ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Thin Solid Films - Volume 517, Issue 11, 2 April 2009, Pages 3222–3226
نویسندگان
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