Temperature-dependent photoluminescence study of As-doped p-type (Zn0.93Mn0.07)O layer

The temperature-dependent photoluminescence (PL) properties of the As-doped (Zn0.93Mn0.07)O layer, which showed the stable p-type conductivity with carrier concentration of ∼ 1018 cm− 3 and carrier mobility of ∼ 10 cm2 V− 1 s− 1, were investigated. From fitting of the Bose–Einstein approximation using extracted emission parameters from temperature-dependent PL spectra, it was found that the interaction between exciton and phonon in p-(Zn0.93Mn0.07)O:As is higher than that in host material ZnO. This result was confirmed as resulting from the increase of disorder-activated phonon scattering which is attributed to the increase of free carriers donated from implanted As dopants.