Deposition of polycrystalline SiGe by surface wave excited plasma

With application to underlayer of strained Si film in mind, polycrystalline SiGe films were deposited by plasma chemical vapor deposition (PCVD) using a high-density surface wave-excited plasma in SiH4/GeH4/H2 gas. The atomic ratio of Si/Ge in the film was controlled by adjusting the gas flow rate ratio of SiH4/GeH4. The lattice spacing of the film was also controlled by the gas flow rate ratio. Polycrystalline SiGe film with large grain size of ∼ 200 nm and high crystallinity was successfully deposited by surface wave-excited plasma.