کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1673086 | 1008943 | 2008 | 4 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Effect of assist ion beam voltage on intrinsic stress and optical properties of Ta2O5 thin films deposited by dual ion beam sputtering
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
فناوری نانو (نانو تکنولوژی)
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: Effect of assist ion beam voltage on intrinsic stress and optical properties of Ta2O5 thin films deposited by dual ion beam sputtering Effect of assist ion beam voltage on intrinsic stress and optical properties of Ta2O5 thin films deposited by dual ion beam sputtering](/preview/png/1673086.png)
چکیده انگلیسی
The optical properties and intrinsic stress of Ta2O5 thin films deposited by dual ion beam sputtering (DIBS) were studied as a function of the assist ion beam voltage (250–650 V). When the assist ion beam voltage was in the range of 350–450 V, the transmittance at the quarter-wave point reached its highest value (lowest absorption). The refractive index increased to 2.185 as the assist ion beam voltage increased from 250 to 350 V, but decreased as the assist ion beam voltage was further increased from 350 to 650 V.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Thin Solid Films - Volume 516, Issue 11, 1 April 2008, Pages 3582–3585
Journal: Thin Solid Films - Volume 516, Issue 11, 1 April 2008, Pages 3582–3585
نویسندگان
S.G. Yoon, S.M. Kang, W.S. Jung, S.-W. Kim, D.H. Yoon,