کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
1673089 1008943 2008 6 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Crystallization of amorphous Ge films induced by semiconductor diode laser annealing
موضوعات مرتبط
مهندسی و علوم پایه مهندسی مواد فناوری نانو (نانو تکنولوژی)
پیش نمایش صفحه اول مقاله
Crystallization of amorphous Ge films induced by semiconductor diode laser annealing
چکیده انگلیسی

Crystallization of amorphous Ge (a-Ge) films induced by semiconductor diode laser (SDL) irradiation has been investigated. 500-nm-thick a-Ge films are crystallized by scanning 807 nm CW SDL light focused to 4.0 × 0.1 mm2 with the scanning speed (v) ranging from 100 to 350 mm/s. From X-ray diffraction and Raman scattering spectra, it is confirmed that the films crystallized at v = 100 mm/s show [220] preferential orientation with no residual amorphous component. On the basis of in-situ monitoring, it has been confirmed that a-Ge films annealed at a v higher than 200 mm/s are transformed to crystalline phase via solid phase crystallization, while films annealed with v lower than 170 mm/s are melted and recrystallized.

ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Thin Solid Films - Volume 516, Issue 11, 1 April 2008, Pages 3595–3600
نویسندگان
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