کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1673119 | 1008944 | 2009 | 4 صفحه PDF | دانلود رایگان |
Nickel diffusion in CuInSe2 thin films was studied in the temperature range 430–520 °C. Thin films of copper indium diselenide (CuInSe2) were prepared by selenization of CuInSe2–Cu–In multilayered structure on glass substrate. A thin film of Nickel was deposited and annealed at different temperatures. Surface morphologies of the Ni diffused and undiffused CuInSe2 films were investigated using scanning electron microscope. The alteration of Nickel concentration in the CuInSe2 thin film was measured by Energy Dispersive X-Ray Fluorescence (EDXRF) technique. These measurements were fitted to a complementary error function solution and the diffusion coefficients at four different temperatures were evaluated. The diffusion coefficients of Ni in CuInSe2 films were estimated from concentration profiles at temperatures 430–520 °C as D = 1.86 × 10− 7(cm2s− 1)exp[− 0.68(eV)/kT].
Journal: Thin Solid Films - Volume 517, Issue 9, 2 March 2009, Pages 2851–2854