کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
1673178 1008945 2009 4 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Low-temperature hydrothermal–galvanic couple synthesis of BaTiO3 thin films on Ti-coated silicon substrates
موضوعات مرتبط
مهندسی و علوم پایه مهندسی مواد فناوری نانو (نانو تکنولوژی)
پیش نمایش صفحه اول مقاله
Low-temperature hydrothermal–galvanic couple synthesis of BaTiO3 thin films on Ti-coated silicon substrates
چکیده انگلیسی

Crystalline BaTiO3 films were synthesized on Ti-coated silicon substrates at temperatures below 100 °C using a novel hydrothermal–galvanic couple method: Ti/Si was employed as the working electrode and platinum as the counter electrode without applying any external voltages or currents. Using this method, forming BaTiO3 is possible at temperatures as low as 50 °C over a period of 2 h, which is not possible with the conventional hydrothermal method. The growth rate of BaTiO3 is also much faster when prepared by such a novel method. The growth kinetics can be fitted rather well by a modified Johnson–Mehl–Avrami–Erofe'ev equation. The obtained activation energy for forming BaTiO3 on Ti/Si is 97 ± 9 kJ mol− 1.

ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Thin Solid Films - Volume 517, Issue 17, 1 July 2009, Pages 4782–4785
نویسندگان
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