کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
1673207 1008945 2009 4 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Enhanced performance in organic light-emitting diodes by sputtering TiO2 ultra-thin film as the hole buffer layer
موضوعات مرتبط
مهندسی و علوم پایه مهندسی مواد فناوری نانو (نانو تکنولوژی)
پیش نمایش صفحه اول مقاله
Enhanced performance in organic light-emitting diodes by sputtering TiO2 ultra-thin film as the hole buffer layer
چکیده انگلیسی

Organic light-emitting diodes were prepared using titanium oxide (TiO2) ultra-thin film by RF magnetron sputtering as the hole buffer layer. The device configuration is ITO/TiO2/N-N′-diphenyl-N-N′-bis(1-naphthyl)-1,1′-biphenyl-4,4′-diamine/tris(8-quinolinolato)-aluminum/LiF/Al. The maximum luminous efficiency for the 1.2 nm TiO2 device is increased by approximately 46% (6.0 cd/A), in comparison with that of the control device (4.1 cd/A). The atomic force microscopy shows that with the insertion of TiO2 buffer layer, the roughness of ITO surface decreases, which is favorable to improve the device luminance and increase the device lifetime. The mechanism behind the enhanced performance is that the TiO2 layer enhances most of the holes injected from the anode and improves the balance of the hole and electron injections.

ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Thin Solid Films - Volume 517, Issue 17, 1 July 2009, Pages 4926–4929
نویسندگان
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