کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1673207 | 1008945 | 2009 | 4 صفحه PDF | دانلود رایگان |

Organic light-emitting diodes were prepared using titanium oxide (TiO2) ultra-thin film by RF magnetron sputtering as the hole buffer layer. The device configuration is ITO/TiO2/N-N′-diphenyl-N-N′-bis(1-naphthyl)-1,1′-biphenyl-4,4′-diamine/tris(8-quinolinolato)-aluminum/LiF/Al. The maximum luminous efficiency for the 1.2 nm TiO2 device is increased by approximately 46% (6.0 cd/A), in comparison with that of the control device (4.1 cd/A). The atomic force microscopy shows that with the insertion of TiO2 buffer layer, the roughness of ITO surface decreases, which is favorable to improve the device luminance and increase the device lifetime. The mechanism behind the enhanced performance is that the TiO2 layer enhances most of the holes injected from the anode and improves the balance of the hole and electron injections.
Journal: Thin Solid Films - Volume 517, Issue 17, 1 July 2009, Pages 4926–4929