Preparation of TiSi nanowires by APCVD used for improving dielectric properties of PST thin film

Nanoelectrode of conductive TiSi nanowires with Ti5Si3 conductive bottom layer underneath is prepared on glass substrate by atmosphere pressure chemical vapor deposition (APCVD) method. Pb0.4Sr0.6 (Ti0.97 Mg0.03) O2.97 (PST) thin film is deposited on the nanoelectrode by rf-sputtering method. The morphology and phase structure of the nanoelectrode are measured by FE-SEM and XRD, respectively. The dielectric property of a PST thin film deposited on the nanoelectrode substrate is obtained by Agilent 4294A Impedance Analyzer. The results show that the conductive Ti5Si3 crystalline phase bottom layer is formed at deposition temperature above 710 °C, and the conductive TiSi single crystal nanowires are formed on the bottom layer perfectly in this case. By using the substrate on which the TiSi nanowire planted Ti5Si3 electrode is prepared, the PST thin film is deposited and it exhibits the high tunability of approximately 61% which is much higher than that deposited on the Ti5Si3 coated glass substrates without TiSi nanowires.