کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1673360 | 1518090 | 2006 | 5 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Down-conversion properties of luminescent silicon nanostructures formed and passivated in HNO3-based solutions
دانلود مقاله + سفارش ترجمه
دانلود مقاله ISI انگلیسی
رایگان برای ایرانیان
کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
فناوری نانو (نانو تکنولوژی)
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: Down-conversion properties of luminescent silicon nanostructures formed and passivated in HNO3-based solutions Down-conversion properties of luminescent silicon nanostructures formed and passivated in HNO3-based solutions](/preview/png/1673360.png)
چکیده انگلیسی
In this work, photoluminescent porous silicon (PS) stain etched and passivated by means of oxidation in HNO3/H2SO4 or HNO3/H2O2 solutions has been studied. These passivation methods have preserved the PS photoluminescence and also have increased the photocarriers' lifetime, which are required for efficient down-conversion properties. The samples have been characterized by Fourier transform infrared spectroscopy, spectrofluorometry and microwave photoconduction decay. The results show that the photocarriers lifetime and the photoluminescence values are sensitively dependent on the evolution of the Si–H, Si–O and O–H bonds.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Thin Solid Films - Volumes 511–512, 26 July 2006, Pages 473–477
Journal: Thin Solid Films - Volumes 511–512, 26 July 2006, Pages 473–477
نویسندگان
B. González-Díaz, R. Guerrero-Lemus, P. Haro-González, D. Borchert, C. Hernández-Rodríguez,